Nitrogen ratio and RTA optimization on sputtered TiN/SiO2/Si electrolyte-insulatoresemiconductor structure for pH sensing characteristics，VACUUM, vol.118 pp.113-117 SCI 2015 Chang Ren、Chia-Ming Yang(Chia-Ming Yang)*、Chengang Lyu、Chin-Yuan Hsu、Tsung-Cheng Chen、Hau-Cheng Wang、Hao Yang、Wei-Tse Lin、Dorota G. Pijanowska、Jer-Chyi Wang、蔡宗叡(TSAI, JUNG-RUEY)、
Structural and optical properties of zirconia thin films deposited by reactive high-power impulse magnetron sputtering，THIN SOLID FILMS, vol.570 pp.404-411 SCI 2014 Xiaoli Zhao、Jie Jin、Jui-Ching Cheng、Jyh-Wei Lee、Kuo-HongWu、林國丞(Kuo-Cheng Lin)、蔡宗叡(TSAI, JUNG-RUEY)、Kou-Chen Liu(Kou-Chen Liu)*
Structural and optical properties of zirconia thin films deposited by reactive high-power impulse magnetron sputtering，THIN SOLID FILMS, vol.570 pp.404-411 SCI 2014 Zhao, Ziaoli Zhao、Jin, Jie、Cheng, Jui-Ching Cheng(Cheng, Jui-Ching Cheng)*、Lee, Jyh-Wei、Wu, Kuo-Hong、林國丞(Lin, Kuo-Cheng)、蔡宗叡(TSAI, JUNG-RUEY)、Liu, Kuo-Chen
Optimization of electrical properties of Al/LaAlO3/Indium Tin Oxide capacitor by adjusting oxygen pressures in pulsed laser deposition and applying post-deposition annealing at low temperatures，THIN SOLID FILMS, vol.555 pp.153-158 SCI 2014 蔡宗叡(TSAI, JUNG-RUEY)、馮文生(Feng, Wen-Sheng)、簡伯修(Chien, Po-Hsiu)、劉國辰(Liu, Kou-Chen)
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels，JAPANESE JOURNAL OF APPLIED PHYSICS, vol.53 pp.04ED14-1-04ED14- SCI 2014 蔡宗叡(TSAI, JUNG-RUEY)、李克慧(Lee, Ko-Hui Lee)、林鴻志(Lin, Horng-Chih)、黃調元(Huang, Tiao-Yuan)
Low-voltage high-speed programming/erasing floating-gate memory device with gate-all-around polycrystalline silicon nanowire，APPLIED PHYSICS LETTERS, vol.103 pp.153102-1-153102- SCI 2013 李克慧、蔡宗叡(TSAI, JUNG-RUEY)、張睿達(Chang, Ruey-Dar)、林鴻志(Huang, Horng-Chih)*、黃調元(Tiao-Yuan, Huang)
Effect of implantation damage on transient loss of phosphorus in silicon，Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions withMaterials and Atoms, vol.313 pp.1- EI 2013 張睿達(Ruey-Dar Chang)*、蔡宗叡(TSAI, JUNG-RUEY)
Shifting Time Waveform Induced CMOS Latch Up in Bootstrapping Technique Applications，International Symposium on the Physical and Failure Amalysis of Integrated Circuits pp.1-4 EI 2012 Purwadi、白書銘(Shu-Ming Bai)、Briliant Adhi Prabowo、蔡宗叡(Jung-Ruey Tsai)*、許健(Gene Sheu)
Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery，Applied Mechanics and Materials, vol.229-231 pp.2077-2081 EI 2012 11. Mohammed Sadique Anwar、Prima Sukma Permata、Md. Imran Siddiqui、蔡宗叡(Jung-Ruey Tsai)*、楊紹明(Shao-Ming Yang)、許健(Gene Sheu)
Effect of finger and device-width on ruggedness of nLDMOS device under Single-pulse Unclamped Inductive Switching (UIS) conditions，ECS Transactions, vol.44 no.1 pp.1123-1130 EI 2012 Neelam Agarwal、Karuna Nidhi Sharma、蔡宗叡(Jung-Ruey Tsai)*、Adarsh Basavalingappa、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)
Optimization of nLDMOS ruggedness under Unclamped Inductive Switching (UIS) stress conditions by poly-gate extension，ECS Transactions, vol.44 no.1 pp.127-133 EI 2012 Neelam Agarwal、Karuna Nidhi Sharmab、蔡宗叡(Jung-Ruey Tsai)*、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)
A New Methodology to Investigate the Effect of Stress and Bias on 2DEG and Drain Current of AlGaN/GaN Based Heterostructure，ECS Transactions, vol.44 no.1 pp.1285-1289 EI 2012 Manoj Kumar、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)*、楊紹明(Shao-Ming Yang)、郭宇鋒(Yu-Feng Guo)
Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs，tencon 2010 pp.1356-1360 Other 2011 Briliant Adhi Prabowo、Anumeha、Abijith Prakash、Raunak Kumar、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)*、楊紹明(Shao-Ming Yang)
Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings，tencon 2010 pp.760-763 Other 2011 蔡宗叡(Jung-Ruey Tsai)*、李元銘(Yuan-Min Lee)、蔡旻縉(Min-Chin Tsai)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)
Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65nm CMOS Technology，tencon 2010 pp.752-755 Other 2011 李元銘(Yuan-Min Lee)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、蔡宗叡(Jung-Ruey Tsai)*
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region，ICSICT 2010 pp.1838-1840 Other 2010 楊紹明(Shao-Ming Yang)、林盈宏(Yin-Huang Lin)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)、杜尚暉(Shang-Hui Tu)
具P型頂環及溝槽區之降低表面電場半導體元件及其製造方法(原：Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65 2015-08-11 ~ 2032-01-09 中華民國發明專利:I496289
Stress Behavior of Cu2ZnSnS4 Thin-Film by Using Different DC-Pulse Conditions in Magnetron Sputtering Process - International Symposium on Sputtering and Plasma Processes (ISSP 2015) 日本京都 2015.07 蔡宗叡(TSAI, JUNG-RUEY)、PI-CHUN JUAN、TSU-PING SHEN、HUNG-YU CHU
High-k ZrHfO Crystallization Induced by ZrN Cap Using High Power Impulse Magnetron Sputtering for Metal-Gate MIS Applications - International Symposium on Sputtering and Plasma Processes (ISSP 2015) 日本京都 2015.07 蔡宗叡(TSAI, JUNG-RUEY)、PI-CHUN JUAN、GUO-CHENG LIN、TSUNG-CHIA HO
Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD Stress - 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Lakeshore Hotel, Hsinchu, Taiwan 2015.06 蔡宗叡(TSAI, JUNG-RUEY)、Ting-Ting Wen、楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、Ruey-Dar Chang、Yi-Jhen Syu、張修福(Hsiu-Fu Chang)、魏肇輝(Zhao-Hui Wei)
Comparison of Electrical Characteristics of N-type Silicon Junctionless Transistors with and without Film Profile Engineering by TCAD Simulation - 2015 IEEE Silicon Nanoelectronics Workshop (SNW 2015) 日本京都 2015.06 蔡宗叡(TSAI, JUNG-RUEY)、Horng-Chih Lin、張修福(Hsiu-Fu Chang)、Bo-Shiuan Shie、Ting-Ting Wen、Tiao-Yuan Huang
ENGINEERED THRESHOLD VOLTAGE IN ALGAN/GAN HEMTS FOR NORMALLY-OFF OPERATION - IEEE The 4th International Symposium on Next-Generation Electronics (IEEE ISNE 2015) Taipei, Taiwan 2015.05 蔡宗叡(TSAI, JUNG-RUEY)、張宜勝(Yi-Sheng Chang)、魏國書(Kuo-Shu Wei)、Ting-Ting Wen
Gate-Recessed AlGaN/GaN HEMTs With the Engineered Al Mole Fraction for Normally off Operation - 2014 International Electron Devices and Materials Symposium (IEDMS 2014) 花蓮福容大飯店 2014.11 蔡宗叡(TSAI, JUNG-RUEY)、Yi-Sheng Chang、Kuo-Shu Wei、Jui-Chang Lin、Ting-Ting Wen
Improvement of CMOS Latch-Up in Bootstrapping Circuit Application - IEEE The 3rd International Symposium on Next-Generation Electronics (IEEE ISNE 2014) Chang-Gung University, Tao-Yuan, Taiwan 2014.05 蔡宗叡(TSAI, JUNG-RUEY)、張宜勝(Yi-Sheng Chang)、林瑞昌(Jui-Chang Lin)、白書銘(Shu-Ming Bai)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、吳俊賢(Chun-Hsien Wu)、Hsueh-Chun Liao、Ruey-Dar Chang
Gate-All-Around Poly-Si Nanowire Memory Devices with Bandgap-Engineered HfAlO Trapping Layer - 44th IEEE Semiconductor Interface Specialists Conference Key Bridge Marriot Hotel Arlington, VA, USA 2013.12 Ko-Hui Lee、Ting-Ting Wen、蔡宗叡(TSAI, JUNG-RUEY)、Horng-Chih Lin、Tiao-Yuan Huang
Carrier Extraction Enhancement by High-k Neodymium Doped-TiO2 Thin-Film for Solar-Cell ARC Passivation - 2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2013 IWDTF) 日本東京 2013.11 Tsu-Ping Shen、Mei-Jhen Liou、蔡宗叡(TSAI, JUNG-RUEY)、林國丞(Guo-Cheng Lin)、Meng-Hao Hsu、阮弼群(Pi-Chun Juan)
以高介電係數三氧化二釤與氧化鉿釤作為閘極絕緣層製作高遷移率之氧化銦鋅透明薄膜電晶體 - 第11屆台塑關係企業應用技術研討會 長庚大學 2013.06 陳柏任、蔡宗叡(TSAI, JUNG-RUEY)、吳國宏、劉國辰、鄭峻文、吳孟奇
Low-Temperature Post-deposition annealing effect on room-temperature fabricated transparent ZnO thin-film transistor with a high-k gate dielectric of Gd2O3 film by PLD - 4th International Symposium on Transparent Conductive Materials (TCM 2012) The venue for TCM2012 will be the Creta Maris Hotel Hersonissos 2012.10 蔡宗叡(TSAI, JUNG-RUEY)、林文凱(Wen-Kai Lin)、簡伯修(Po-Hsiu Chien)、劉國丞(Kou-Chen Liu)
High electrical performance of amorphous indium zinc oxide thin film transistors with high-k Sm2O3 gate dielectric fabricated at room temperature - 4th International Symposium on Transparent Conductive Materials (TCM 2012) The venue for TCM2012 will be the Creta Maris Hotel Hersonissos 2012.10 林文凱(Wen-Kai Lin)、鄭峻文(Jun-Wen Zheng)、劉國辰(Kou-Chen Liu)
Characteristics of high-k dielectric of Sm2O3 and SmHfO metal-oxide-metal capacitors - 4th International Symposium on Transparent Conductive Materials (TCM 2012) The venue for TCM2012 will be the Creta Maris Hotel Hersonissos 2012.10 蔡宗叡(TSAI, JUNG-RUEY)、林文凱(Wen-Kai Lin)、鄭峻文(Jun-Wen Zheng)、劉國辰(Kou-Chen Liu)
Room temperature fabricated transparent IZO thin-film transistor with a high-k gate dielectric of LaAlO3 film - 4th International Symposium on Transparent Conductive Materials (TCM 2012) The venue for TCM2012 will be the Creta Maris Hotel Hersonissos 2012.10 蔡宗叡(TSAI, JUNG-RUEY)、林文凱(Wen-Kai Lin)
Effects of Oxygen Pressure and Post-Deposition Annealing on the Characteristics of Pulsed Laser Deposited High-k Dielectric LaAlO3 Films on Indium Tin Oxide Films - ThinFilm 2012 the School of Accountancy and Law, Singapore Management University(SMU) 2012.07 蔡宗叡(TSAI, JUNG-RUEY)、林文凱(Wen-Kai Lin)、馮文生(Wen-Sheng Feng)、劉國辰(Kou-Chen Liu)、Eric Huang
掘入式閘極結構氮化鎵鋁/氮化鎵高電子遷移率電晶體結構開發特性模擬 (NSC 102-2221-E-468 -028) 2013.08.01 ~ 2014.07.31 蔡宗叡(TSAI, JUNG-RUEY)
新穎高功率元件氮化鎵鋁 / 氮化鎵高電子遷移率電晶體開發研究及元件可靠度測試模擬系統之建立 (101-asia-25) 2013.02.01 ~ 2014.01.31 蔡宗叡(TSAI, JUNG-RUEY)
三維積體電路堆疊電晶體之製程與元件模擬(I) (NSC 102-2221-E-182-059) 2013.08.01 ~ 2014.07.31 張睿達(Chang, Ruey-Dar)、蔡宗叡(TSAI, JUNG-RUEY)
複晶矽薄膜矽與二氧化矽結構上之磷摻雜劑量損失行為模式 (NSC 100 - 2218 - E - 468 - 003) 2011.12.01 ~ 2012.10.31 蔡宗叡(Jung-Ruey Tsai)
半導體元件模擬 EO310256A (大學日間部 )【第105學年第2學期：A班】<br>培養學生對於半導體金氧半場效電晶體元件之製程的基本觀念及電性操作的基本原理及元件特性，透過技術電腦輔助設計(TCAD)模擬軟體的操作,使同學具備有半導體元件結構及特性之設計基礎與概念。